多段构件组成的压杆平面内稳定

分析由若干段等截面或者变截面构件组成的压杆平面内稳定问题．从由三段等截面构件组成的压杆平面内稳定问题出发，对两端为变截面、中间为等截面构件组成的压杆的平面内稳定问题进行了分析，得出和两端为等截面构件情况类似的屈曲荷载计算公式．并对两端固接的情况进行了研究分析．     

High Voltage Pulse Power and the Technics for the Capacitor Power-Storage Type

Lower hybrid wave （LHW）, electro cyclotron （EC） and neutral beam injection （NBI） etc. are the important methods of auxiliary heating. They would be devoted to the HL-2A tokamak step by step. In order to satisfy the debug of each system and the need of the experiment, the system should be equipped with high voltage pulse power （HVPP） according to the requirement.     

Unusual current‐voltage characteristics of single crystalline and bicrystalline La0.7Ca0.3MnO3 films

The current‐voltage characteristics of single crystalline and bicrystalline La_0.7Ca_0.3MnO₃ films were measured and analyzed. Several epitaxial films, as well as 45° [001]‐tilt grain boundaries, display current‐voltage characteristics which are asymmetric with respect to polarity reversal of the bias current. One epitaxial film has a polarity dependent resistance of ～340kΩ and of ～670kΩ in forward and in reverse direction, respectively.     

高压沿面放电烟气脱硫技术动态实验研究

本文针对高压沿面放电活化气体的烟气脱硫技术,在静态实验研究的基础上进行了实验室冷态动态的实验研究。设计了便于反应和测量的动态实验装置。实验解释了电子束法脱硫技术中导致氨气泄漏的部分原因,验证了高压沿面放电脱硫技术可以在较低的运行电压下,达到提高脱硫效率,减少氨气泄漏的作用。     

0.18μm CMOS工艺栅极氧化膜可靠性的衬底和工艺依存性

用斜坡电压法(Voltage Ramp, V-ramp)评价了0.18μm双栅极 CMOS工艺栅极氧化膜击穿电量(Charge to Breakdown, Q_bd)和击穿电压(Voltage to Breakdown, V_bd). 研究结果表明，低压器件(1.8V)的栅极氧化膜(薄氧)p型衬底MOS电容和N型衬底电容的击穿电量值相差较小，而高压器件(3.3V)栅极氧化膜(厚氧)p衬底MOS电容和n衬底MOS电容的击穿电量值相差较大，击穿电压测试值也发现与击穿电量 关键词： 薄氧 可靠性 击穿电压 击穿电量     

LaB6在低压强氮气和氦气中的放电特性

 研究了LaB₆在1~10 Pa氮气和氦气中的直流和脉冲放电特性以及放电过程对电极的影响。结果表明，电极直径为5 mm的LaB6氦气放电管在脉冲工作状态下可以长期稳定放电。在脉冲电压为2.2 kV、脉冲宽度10 ms、频率13.3 Hz下，脉冲峰值放电电流超过120 A。氦气放电管在放电过程中，阴极表面有离子的清洗和活化作用，可以使电极的表面逸出功降低，提高放电管的发射能力和稳定性。LaB₆作为气体放电电极具有寿命长、延迟时间短、放电电流大等优点，可用于重复强流脉冲气体放电的高压高速开关器件。     

气体放电等离子体特性测量I-V曲线不对称性的研究

利用气体放电双探针法研究了等离子体的I-V曲线中的电流I相对于电压V轴交点的不对称性,并提出2种可能的解释:一认为是由于两探针表面积不同引起的;二认为是由于探针所在处等离子体电位不等引起的.本文利用仪器的工艺误差和调换放电管电压的方法,对提出的2种可能原因分别进行验证,并指出第二种解释的合理性,并对其进行了理论分析.     

用图像分析限流和分压接法中滑动变阻器的选取

借助Ux-Rap图像分析得出滑动变阻器的选取原则:控制电路采用限流接法时,要求滑动变阻器的最大阻值与被测电阻的阻值接近,即接近为原则;控制电路采用分压式接法时,滑动变阻器的最大阻值应远小于被测电阻的阻值,故在分压接法中,应选择阻值较小而额定电流较大的滑动变阻器.     

Ab initio study of sodium intercalation into metal oxides

Using the full-potential linearized augmented plane wave (FP-LAPW) method, we have studied the effect of chemistry on the average intercalation voltage (AIV) caused by the Na ions intercalating into transition metal oxides. The effect of transition metal was systematically studied by varying M=Co, Ni and Mn in NaMO₂ and fixing the α-NaFeO₂ layered structure. The effect of the guest atoms into the host material is discussed in terms of the structural and electronic properties. Comparatively to Li intercalation, a significant electron transfer towards transition metal was found. This observation suggests that the transition metal contribute to the AIV determination and confirms the common assumption that intercalated electron reduces M⁴⁺ to M³⁺.